Amorphous silicon on p-type crystalline silicon heterojunction
نویسندگان
چکیده
2014 A junction was grown by d.c. sputtering of n-type silicon on a p-type crystalline substrate. Ohmic contacts were deposited by evaporation of aluminum. The junction obeyed Schottky model both under forward and reverse bias conditions, but with higher idealization factor « n » due to its high internal resistance. The 1/C2-V relation showed the presence of localized and interface states. The photovoltaic effect gave efficiency of 0.25 % and fill factor of 0.26 due to the high internal resistance. Photoconductive effect was also observed. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978, 1
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